Flexible Electronics News

Applied Materials Delivers Critical Photomask Etch Technology for 22nm Lithography

New Tetra X system breaks the 2nm uniformity barrier to enable critical layer masks at 22nm

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By: DAVID SAVASTANO

Editor, Ink World Magazine

Applied Materials launched its new Applied Centura Tetra X Advanced Reticle Etch system – the only system capable of etching the photomasks needed for customers’ most challenging device layers at 22nm and beyond. Expanding the capabilities of Applied’s industry-standard Tetra III platform, the Tetra X breaks the 2nm critical dimension uniformity (CDU) barrier across all feature sizes – delivering the critical mask accuracy that can enable mask makers to exceed their customers’ strictest pattern-...

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